A-RAM
Advanced-Random Access Memory (RAM) is a type of dynamic random-access memory (DRAM) based on single-transistor capacitor-less cells. A-RAM was invented in 2009 at the University of Granada (UGR), in Spain, in collaboration with the Centre National de la Recherche Scientifique (CNRS), in France. It was conceived by Noel Rodriguez (UGR), Francisco Gamiz (UGR) and Sorin Cristoloveanu (CNRS). A-RAM is compatible with single-gate silicon on insulator (SOI), double-gate, FinFETs and multiple-gate field-effect transistors (MuFETs). The conventional 1-transistor + 1-capacitor DRAM is extensively used in the semiconductor industry for manufacturing high-density dynamic memories. In 2009, the researchers thought that in manufacturing processes with features smaller than 45 nm, the DRAM industry would need to avoid the miniaturization issue of the memory-cell capacitor. The 1T-DRAM family of memories, including A-RAM, replaced the storage capacitor for the floating body of SOI transistors to store the charge. The universities obtained at least one patent on the technology, and tried to license it in 2010. The University of Granada ran a web site promoting the technology, updated through 2010. A version called A2RAM was demonstrated in 2012.
| Computer memory and data storage types |
|---|
| Volatile |
| Non-volatile |
Advanced-Random Access Memory (RAM) is a type of dynamic random-access memory (DRAM) based on single-transistor capacitor-less cells. A-RAM was invented in 2009 at the University of Granada (UGR), in Spain, in collaboration with the Centre National de la Recherche Scientifique (CNRS), in France. It was conceived by Noel Rodriguez (UGR), Francisco Gamiz (UGR) and Sorin Cristoloveanu (CNRS). A-RAM is compatible with single-gate silicon on insulator (SOI), double-gate, FinFETs and multiple-gate field-effect transistors (MuFETs).
The conventional 1-transistor + 1-capacitor DRAM is extensively used in the semiconductor industry for manufacturing high-density dynamic memories. In 2009, the researchers thought that in manufacturing processes with features smaller than 45 nm, the DRAM industry would need to avoid the miniaturization issue of the memory-cell capacitor. The 1T-DRAM family of memories, including A-RAM, replaced the storage capacitor for the floating body of SOI transistors to store the charge.[1][2]
The universities obtained at least one patent on the technology,[3] and tried to license it in 2010.[4] The University of Granada ran a web site promoting the technology, updated through 2010.[5] A version called A2RAM was demonstrated in 2012.[6]
References
[edit]- ^ Noel Rodriguez, Sorin Cristoloveanu and Francisco Gamiz (5 October 2009). "A-RAM: Novel capacitor-less DRAM memory". 2009 International SOI Conference. IEEE. doi:10.1109/SOI.2009.5318734.
- ^ Noel Rodriguez, Sorin Cristoloveanu and Francisco Gamiz (September 2010). "A-RAM Memory Cell: Concept and Operation". Electron Device Letters. IEEE: 972–974. doi:10.1109/LED.2010.2055531.
- ^ Patent number: FR09/52453, "Point mémoire RAM à un transistor", Institut National de la Propriété Industrielle
- ^ Peter Clarke (19 October 2010). "France's CNRS offers nano-memory IP". EE Times. Retrieved 30 September 2016.
- ^ "A-RAM: The Advanced DRAM Substitute". Web site. University of Granada. 2010. Archived from the original on 18 May 2013. Retrieved 30 September 2016.
- ^ University of Granada (22 November 2012). "Scientists design a revolutionary data storage device". Science Daily news release. Retrieved 30 September 2016.